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Performance Evaluation and Stability Analysis of Gate-All-Around Junctionless Transistor Based 6T SRAM Memory Cell (Record no. 133186)

MARC details
000 -LEADER
fixed length control field 01824nam a2200157 4500
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 251104b |||||||| |||| 00| 0 eng d
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Raj Sambhav
245 ## - TITLE STATEMENT
Title Performance Evaluation and Stability Analysis of Gate-All-Around Junctionless Transistor Based 6T SRAM Memory Cell
300 ## - PHYSICAL DESCRIPTION
Extent Pages 384-392
520 ## - SUMMARY, ETC.
Summary, etc. biblio.abstract In this work, the suitability and linearity of a Gate-All-Around Junctionless Transistor (GAA-JLT) is evaluated for designing of high reliable 6T SRAM memory cell. The analysis is also carried out for designing of GAA-JLT based CMOS inverter which demonstrate the robust noise margins. The noise margin gives insights about the efficacy of GAA-JLT CMOS inverters for digital circuit applications, particularly for memory applications. Static noise margin data for 6T SRAMs based on GAA JLT are included and compared against published work to support the findings. The higher SNM values obtained in the GAA JLT-based SRAM cell indicate enhanced stability during SRAM operations. Additionally, the paper investigates the impact of Word-Line Voltage Modulation and Supply Voltage Modulation on SNM stability. Both the design of the device and circuit implementation have been performed using ATLAS 3-D simulator. Mixed-mode simulation was used for circuit simulation. Overall, this research underscores the promise of GAA-JLT in digital circuits, highlighting its potential to improve stability, particularly in memory contexts.
654 ## - SUBJECT ADDED ENTRY--FACETED TOPICAL TERMS
Subject <a href="Static random access memory (SRAM)">Static random access memory (SRAM)</a>
-- <a href="Gate-all-around MOSFET">Gate-all-around MOSFET</a>
-- <a href="Junctionless transistor">Junctionless transistor</a>
-- <a href="CMOS inverter">CMOS inverter</a>
-- <a href="Reliability">Reliability</a>
-- <a href="Stability">Stability</a>
-- <a href="Static noise margin">Static noise margin</a>
700 ## - ADDED ENTRY--PERSONAL NAME
Personal name Yogesh Pratap
773 0# - HOST ITEM ENTRY
Host Biblionumber 133185
Host Itemnumber 114372
Main entry heading Paksham Mahajan
Title Differential Power Analysis Resistant Secured S-Box Circuit Using CMOS Transmission Gate Logic
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Koha item type Journal Article
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Location (home branch) Sublocation or collection (holding branch) Date acquired Koha issues (times borrowed) Piece designation (barcode) Koha date last seen Price effective from Koha item type
    Dewey Decimal Classification     SNDT Juhu SNDT Juhu 04/11/2025   JP980.6 04/11/2025 04/11/2025 Journal Article