This paper presents a comparison of a hetero-stacked TFET and a delta-doped Germanium source TFET in terms of various electrical parameters for different gate dielectric oxide thicknesses. Variation of the oxide thickness is carried out for parameters like on current, off current, current ratio, subthreshold swing, and threshold voltage for both the Tunnel FETs. The vertical Tunnel FET possesses a very high current of 1.44 mA at 2 nm oxide thickness while the HS-TFET on current is 4.8 × 10−8 A for the same insulator thickness. A steep subthreshold slope of 21.23 mV/dec is attained for the vertical TFET while an SS of 34.86 mV/dec is seen from the HS-TFET. A higher cut-off frequency in the range of GHz is obtained for the vertical TFET while the HS-TFET is in the range of MHz due to its high discrepancy in the transconductance and the current. A digital inverter has been implemented for both the Hetero-stacked TFET and the delta-doped Germanium source TFET which shows that there is a decrement in the average delay parameter for the delta-doped Germanium source vertical TFET. A dielectric modulated label-free biosensor of both devices has been carried out and compared which shows a much better sensitivity for the TFET biosensor employing vertical tunneling.